Chin. J. Semicond. > 2001, Volume 22 > Issue 10 > 1292-1297
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栅控二极管R-G电流法表征SOI-MOS器件埋氧层界面陷阱的敏感性分析(英文)

何进 , 张兴 , 黄如 , 黄爱华 , 卢震亭 , 王阳元 , 张耀辉 , 余山 and 贾林

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Key words: R-G电流, 栅控二极管, 界面陷阱, SOIMOSFET器件, 敏感性

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(10): 1292-1297
      何进, 张兴, 黄如, 黄爱华, 卢震亭, 王阳元, 张耀辉, 余山, 贾林. 栅控二极管R-G电流法表征SOI-MOS器件埋氧层界面陷阱的敏感性分析(英文)[J]. 半导体学报(英文版), 2001, 22(10): 1292-1297.
      Citation:
      何进, 张兴, 黄如, 黄爱华, 卢震亭, 王阳元, 张耀辉, 余山, 贾林. 栅控二极管R-G电流法表征SOI-MOS器件埋氧层界面陷阱的敏感性分析(英文)[J]. 半导体学报(英文版), 2001, 22(10): 1292-1297.
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      • Received Date: 2015-08-20

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