Chin. J. Semicond. > 1982, Volume 3 > Issue 4 > 304-311
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热氧化二氧化硅层中氟离子的注入及其分布

徐至中 and 梁励芬

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(4): 304-311
      徐至中, 梁励芬. 热氧化二氧化硅层中氟离子的注入及其分布[J]. 半导体学报(英文版), 1982, 3(4): 304-311.
      Citation:
      徐至中, 梁励芬. 热氧化二氧化硅层中氟离子的注入及其分布[J]. 半导体学报(英文版), 1982, 3(4): 304-311.
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      • Received Date: 2015-08-20

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