Chin. J. Semicond. > 2004, Volume 25 > Issue 1 > 69-72
|

CONTENTS

非掺杂AlGaN/GaN微波功率HEMT

陈堂胜 , 焦刚 , 薛舫时 , 曹春海 and 李拂晓

+ Author Affiliations

PDF

Key words: 宽禁带半导体, AlGaN/GaN, 高电子迁移率晶体管, 微波大功率

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2319 Times PDF downloads: 1179 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 January 2004

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2004  >  25(1): 69-72
      陈堂胜, 焦刚, 薛舫时, 曹春海, 李拂晓. 非掺杂AlGaN/GaN微波功率HEMT[J]. 半导体学报(英文版), 2004, 25(1): 69-72.
      Citation:
      陈堂胜, 焦刚, 薛舫时, 曹春海, 李拂晓. 非掺杂AlGaN/GaN微波功率HEMT[J]. 半导体学报(英文版), 2004, 25(1): 69-72.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return