Chin. J. Semicond. > 1995, Volume 16 > Issue 10 > 725-729

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InGaAs／InP超晶格材料的GSMBE生长研究

孙殿照，王晓亮，李晓兵，国红熙，阎春辉，李建平，朱世荣，李灵霄，曾一平，孔梅影，侯洵

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(10): 725-729
      孙殿照，王晓亮，李晓兵，国红熙，阎春辉，李建平，朱世荣，李灵霄，曾一平，孔梅影，侯洵. InGaAs／InP超晶格材料的GSMBE生长研究[J]. 半导体学报(英文版), 1995, 16(10): 725-729.
      Citation:
      孙殿照，王晓亮，李晓兵，国红熙，阎春辉，李建平，朱世荣，李灵霄，曾一平，孔梅影，侯洵. InGaAs／InP超晶格材料的GSMBE生长研究[J]. 半导体学报(英文版), 1995, 16(10): 725-729.
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      • Received Date: 2015-08-19

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