Chin. J. Semicond. > 2006, Volume 27 > Issue 5 > 769-773

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Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate

Xue Chunlai, Yao Fei, Cheng Buwen and Wang Qiming

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Abstract: The effects of key geometrical parameters on the performance of integrated spiral inductors are investigated with the 3D electromagnetic simulator HFSS.While varying geometrical parameters such as the number of turns (N),the width of the metal traces (W),the spacing between the traces (S),and the inner diameter (ID),changes in the performance of the inductors are analyzed in detail.The reasons for these changes in performance are presented.Simulation results indicate that the performance of an integrated spiral inductor can be improved by optimizing its layout.Some design rules are summarized.

Key words: silicon substrate spiral inductorquality factorself resonance frequency

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2006

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      Xue Chunlai, Yao Fei, Cheng Buwen, Wang Qiming. Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate[J]. Journal of Semiconductors, 2006, 27(5): 769-773. ****Xue C L, Yao F, Cheng B W, Wang Q M. Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate[J]. Chin. J. Semicond., 2006, 27(5): 769.
      Citation:
      Xue Chunlai, Yao Fei, Cheng Buwen, Wang Qiming. Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate[J]. Journal of Semiconductors, 2006, 27(5): 769-773. ****
      Xue C L, Yao F, Cheng B W, Wang Q M. Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate[J]. Chin. J. Semicond., 2006, 27(5): 769.

      Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate

      • Received Date: 2015-08-20

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