Chin. J. Semicond. > 1980, Volume 1 > Issue 3 > 198-203
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椭圆偏光法研究砷离子注入硅的损伤和退火

莫党 , 卢因诚 , 李旦晖 , 刘尚合 and 卢武星

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1980

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      Article Navigation >  Journal of Semiconductors  > 1980  >  1(3): 198-203
      莫党, 卢因诚, 李旦晖, 刘尚合, 卢武星. 椭圆偏光法研究砷离子注入硅的损伤和退火[J]. 半导体学报(英文版), 1980, 1(3): 198-203.
      Citation:
      莫党, 卢因诚, 李旦晖, 刘尚合, 卢武星. 椭圆偏光法研究砷离子注入硅的损伤和退火[J]. 半导体学报(英文版), 1980, 1(3): 198-203.
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      • Received Date: 2015-08-20

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