Journal of Semiconductors

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Volume 1, Issue 3, Mar 1980

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CONTENTS

硅中杂质能级的理论计算

陆栋, 陆奋

Chin. J. Semicond. 1980, 1(3): 173-178

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null. null[J]. Chin. Journal of Semiconductors, 1980, 1(3): 173.

陆栋, 陆奋. 硅中杂质能级的理论计算[J]. Chin. J. Semicond., 1980, 1(3): 173..Export: BibTex EndNote

陆栋, 陆奋. 硅中杂质能级的理论计算[J]. Chin. J. Semicond., 1980, 1(3): 173...

非晶态硅薄膜的制备及其肖特基势垒的研究

陈坤基, 何宇亮, 杜家方

Chin. J. Semicond. 1980, 1(3): 179-186

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1980, 1(3): 179.

陈坤基, 何宇亮, 杜家方. 非晶态硅薄膜的制备及其肖特基势垒的研究[J]. Chin. J. Semicond., 1980, 1(3): 179..Export: BibTex EndNote

陈坤基, 何宇亮, 杜家方. 非晶态硅薄膜的制备及其肖特基势垒的研究[J]. Chin. J. Semicond., 1980, 1(3): 179...

Ge对非晶硫系化合物半导体低温跳跃电导的影响

陈光华, 王印月, 吴锦华, 甘润今, 张仿清

Chin. J. Semicond. 1980, 1(3): 187-191

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1980, 1(3): 187.

陈光华, 王印月, 吴锦华, 甘润今, 张仿清. Ge对非晶硫系化合物半导体低温跳跃电导的影响[J]. Chin. J. Semicond., 1980, 1(3): 187..Export: BibTex EndNote

陈光华, 王印月, 吴锦华, 甘润今, 张仿清. Ge对非晶硫系化合物半导体低温跳跃电导的影响[J]. Chin. J. Semicond., 1980, 1(3): 187...

铒离子注入的硫化锌的退火研究

虞家琪, F.J.Bryant

Chin. J. Semicond. 1980, 1(3): 192-197

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1980, 1(3): 192.

虞家琪, F.J.Bryant. 铒离子注入的硫化锌的退火研究[J]. Chin. J. Semicond., 1980, 1(3): 192..Export: BibTex EndNote

虞家琪, F.J.Bryant. 铒离子注入的硫化锌的退火研究[J]. Chin. J. Semicond., 1980, 1(3): 192...

椭圆偏光法研究砷离子注入硅的损伤和退火

莫党, 卢因诚, 李旦晖, 刘尚合, 卢武星

Chin. J. Semicond. 1980, 1(3): 198-203

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1980, 1(3): 198.

莫党, 卢因诚, 李旦晖, 刘尚合, 卢武星. 椭圆偏光法研究砷离子注入硅的损伤和退火[J]. Chin. J. Semicond., 1980, 1(3): 198..Export: BibTex EndNote

莫党, 卢因诚, 李旦晖, 刘尚合, 卢武星. 椭圆偏光法研究砷离子注入硅的损伤和退火[J]. Chin. J. Semicond., 1980, 1(3): 198...

Gunn器件中掺杂梯度引起的静止畴的计算机模拟

王守武, 潘国雄, 王重云

Chin. J. Semicond. 1980, 1(3): 204-219

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1980, 1(3): 204.

王守武, 潘国雄, 王重云. Gunn器件中掺杂梯度引起的静止畴的计算机模拟[J]. Chin. J. Semicond., 1980, 1(3): 204..Export: BibTex EndNote

王守武, 潘国雄, 王重云. Gunn器件中掺杂梯度引起的静止畴的计算机模拟[J]. Chin. J. Semicond., 1980, 1(3): 204...

平面扩散砷化镓变容管

田牧

Chin. J. Semicond. 1980, 1(3): 220-227

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null. null[J]. Chin. Journal of Semiconductors, 1980, 1(3): 220.

田牧. 平面扩散砷化镓变容管[J]. Chin. J. Semicond., 1980, 1(3): 220..Export: BibTex EndNote

田牧. 平面扩散砷化镓变容管[J]. Chin. J. Semicond., 1980, 1(3): 220...

直接从MOS结构C-t曲线计算少数载流子体产生寿命的新方法

程文超, 黄振岗

Chin. J. Semicond. 1980, 1(3): 228-233

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1980, 1(3): 228.

程文超, 黄振岗. 直接从MOS结构C-t曲线计算少数载流子体产生寿命的新方法[J]. Chin. J. Semicond., 1980, 1(3): 228..Export: BibTex EndNote

程文超, 黄振岗. 直接从MOS结构C-t曲线计算少数载流子体产生寿命的新方法[J]. Chin. J. Semicond., 1980, 1(3): 228...

四毫米GaAs肖特基势垒二极管及混频器

混频器研制组

Chin. J. Semicond. 1980, 1(3): 234-246

Abstract PDF Cited by ()

混频器研制组. null[J]. Chin. Journal of Semiconductors, 1980, 1(3): 234.

混频器研制组. 四毫米GaAs肖特基势垒二极管及混频器[J]. Chin. J. Semicond., 1980, 1(3): 234..Export: BibTex EndNote

混频器研制组. 四毫米GaAs肖特基势垒二极管及混频器[J]. Chin. J. Semicond., 1980, 1(3): 234...

一种新的金属膜干法刻蚀技术

韩阶平, 吕秀英, 杨占坤, 胥兴才

Chin. J. Semicond. 1980, 1(3): 247-248

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1980, 1(3): 247.

韩阶平, 吕秀英, 杨占坤, 胥兴才. 一种新的金属膜干法刻蚀技术[J]. Chin. J. Semicond., 1980, 1(3): 247..Export: BibTex EndNote

韩阶平, 吕秀英, 杨占坤, 胥兴才. 一种新的金属膜干法刻蚀技术[J]. Chin. J. Semicond., 1980, 1(3): 247...

离子注入无显影刻蚀技术

王培大, 韩阶平, 裴荣祥, 洪啸吟

Chin. J. Semicond. 1980, 1(3): 249-250

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1980, 1(3): 249.

王培大, 韩阶平, 裴荣祥, 洪啸吟. 离子注入无显影刻蚀技术[J]. Chin. J. Semicond., 1980, 1(3): 249..Export: BibTex EndNote

王培大, 韩阶平, 裴荣祥, 洪啸吟. 离子注入无显影刻蚀技术[J]. Chin. J. Semicond., 1980, 1(3): 249...

激光退火对硅氧化层错的抑制作用

鲍希茂, 嵇福权, 黄信凡, 陈南斗

Chin. J. Semicond. 1980, 1(3): 251-253

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1980, 1(3): 251.

鲍希茂, 嵇福权, 黄信凡, 陈南斗. 激光退火对硅氧化层错的抑制作用[J]. Chin. J. Semicond., 1980, 1(3): 251..Export: BibTex EndNote

鲍希茂, 嵇福权, 黄信凡, 陈南斗. 激光退火对硅氧化层错的抑制作用[J]. Chin. J. Semicond., 1980, 1(3): 251...

光电压光谱法测定磷砷化镓外延层的组成(二)

邱德仁, 汪乃兴

Chin. J. Semicond. 1980, 1(3): 254-256

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1980, 1(3): 254.

邱德仁, 汪乃兴. 光电压光谱法测定磷砷化镓外延层的组成(二)[J]. Chin. J. Semicond., 1980, 1(3): 254..Export: BibTex EndNote

邱德仁, 汪乃兴. 光电压光谱法测定磷砷化镓外延层的组成(二)[J]. Chin. J. Semicond., 1980, 1(3): 254...

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