Chin. J. Semicond. > 1980, Volume 1 > Issue 3 > 228-233
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直接从MOS结构C-t曲线计算少数载流子体产生寿命的新方法

程文超 and 黄振岗

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1980

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      Article Navigation >  Journal of Semiconductors  > 1980  >  1(3): 228-233
      程文超, 黄振岗. 直接从MOS结构C-t曲线计算少数载流子体产生寿命的新方法[J]. 半导体学报(英文版), 1980, 1(3): 228-233.
      Citation:
      程文超, 黄振岗. 直接从MOS结构C-t曲线计算少数载流子体产生寿命的新方法[J]. 半导体学报(英文版), 1980, 1(3): 228-233.
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      • Received Date: 2015-08-20

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