Chin. J. Semicond. > 1980, Volume 1 > Issue 3 > 187-191
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Ge对非晶硫系化合物半导体低温跳跃电导的影响

陈光华 , 王印月 , 吴锦华 , 甘润今 and 张仿清

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1980

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      Article Navigation >  Journal of Semiconductors  > 1980  >  1(3): 187-191
      陈光华, 王印月, 吴锦华, 甘润今, 张仿清. Ge对非晶硫系化合物半导体低温跳跃电导的影响[J]. 半导体学报(英文版), 1980, 1(3): 187-191.
      Citation:
      陈光华, 王印月, 吴锦华, 甘润今, 张仿清. Ge对非晶硫系化合物半导体低温跳跃电导的影响[J]. 半导体学报(英文版), 1980, 1(3): 187-191.
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      • Received Date: 2015-08-20

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