Chin. J. Semicond. > 1989, Volume 10 > Issue 9 > 717-721
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GaP:N,Zn中等电子陷阱与Zn受主之间的辐射复合

余琦 , 张勇 , 郑健生 and 颜炳章

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(9): 717-721
      余琦, 张勇, 郑健生, 颜炳章. GaP:N,Zn中等电子陷阱与Zn受主之间的辐射复合[J]. 半导体学报(英文版), 1989, 10(9): 717-721.
      Citation:
      余琦, 张勇, 郑健生, 颜炳章. GaP:N,Zn中等电子陷阱与Zn受主之间的辐射复合[J]. 半导体学报(英文版), 1989, 10(9): 717-721.
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      • Received Date: 2015-08-19

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