Journal of Semiconductors

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Volume 10, Issue 9, Sep 1989

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CONTENTS

Si(113)表面电子结构的研究

张瑞勤, 王家俭, 戴国才, 吴汲安, 张敬平, 邢益荣

Chin. J. Semicond. 1989, 10(9): 645-652

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(9): 645.

张瑞勤, 王家俭, 戴国才, 吴汲安, 张敬平, 邢益荣. Si(113)表面电子结构的研究[J]. Chin. J. Semicond., 1989, 10(9): 645..Export: BibTex EndNote

张瑞勤, 王家俭, 戴国才, 吴汲安, 张敬平, 邢益荣. Si(113)表面电子结构的研究[J]. Chin. J. Semicond., 1989, 10(9): 645...

Ce在Si(111)面上吸附的EHT研究方法

王磊, 叶令

Chin. J. Semicond. 1989, 10(9): 653-658

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(9): 653.

王磊, 叶令. Ce在Si(111)面上吸附的EHT研究方法[J]. Chin. J. Semicond., 1989, 10(9): 653..Export: BibTex EndNote

王磊, 叶令. Ce在Si(111)面上吸附的EHT研究方法[J]. Chin. J. Semicond., 1989, 10(9): 653...

Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火

吴春武, 殷士端, 张敬平, 范缇文, 刘家瑞, 朱沛然

Chin. J. Semicond. 1989, 10(9): 659-666

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(9): 659.

吴春武, 殷士端, 张敬平, 范缇文, 刘家瑞, 朱沛然. Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火[J]. Chin. J. Semicond., 1989, 10(9): 659..Export: BibTex EndNote

吴春武, 殷士端, 张敬平, 范缇文, 刘家瑞, 朱沛然. Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火[J]. Chin. J. Semicond., 1989, 10(9): 659...

用离子束混合及快速热处理方法形成钽的硅化物

姚文卿, Heiner Ryssel

Chin. J. Semicond. 1989, 10(9): 667-671

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(9): 667.

姚文卿, H Ryssel. 用离子束混合及快速热处理方法形成钽的硅化物[J]. Chin. J. Semicond., 1989, 10(9): 667..Export: BibTex EndNote

姚文卿, H Ryssel. 用离子束混合及快速热处理方法形成钽的硅化物[J]. Chin. J. Semicond., 1989, 10(9): 667...

中子辐照损伤区对硅少数载流子寿命的影响

施毅, 吴凤美, 沈德勋, 程开甲, 王长河

Chin. J. Semicond. 1989, 10(9): 672-679

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(9): 672.

施毅, 吴凤美, 沈德勋, 程开甲, 王长河. 中子辐照损伤区对硅少数载流子寿命的影响[J]. Chin. J. Semicond., 1989, 10(9): 672..Export: BibTex EndNote

施毅, 吴凤美, 沈德勋, 程开甲, 王长河. 中子辐照损伤区对硅少数载流子寿命的影响[J]. Chin. J. Semicond., 1989, 10(9): 672...

一种可编程序逻辑阵列的布局算法

薄建国

Chin. J. Semicond. 1989, 10(9): 680-687

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(9): 680.

薄建国. 一种可编程序逻辑阵列的布局算法[J]. Chin. J. Semicond., 1989, 10(9): 680..Export: BibTex EndNote

薄建国. 一种可编程序逻辑阵列的布局算法[J]. Chin. J. Semicond., 1989, 10(9): 680...

用于半导体器件瞬态特性研究的大幅度矩形纳秒脉冲发生器

周旋, 鲍秉乾, 李强, 李锦林

Chin. J. Semicond. 1989, 10(9): 688-692

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(9): 688.

周旋, 鲍秉乾, 李强, 李锦林. 用于半导体器件瞬态特性研究的大幅度矩形纳秒脉冲发生器[J]. Chin. J. Semicond., 1989, 10(9): 688..Export: BibTex EndNote

周旋, 鲍秉乾, 李强, 李锦林. 用于半导体器件瞬态特性研究的大幅度矩形纳秒脉冲发生器[J]. Chin. J. Semicond., 1989, 10(9): 688...

择优生长的多晶硅压阻统计理论

赵甘鸣, 鲍敏杭

Chin. J. Semicond. 1989, 10(9): 693-701

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(9): 693.

赵甘鸣, 鲍敏杭. 择优生长的多晶硅压阻统计理论[J]. Chin. J. Semicond., 1989, 10(9): 693..Export: BibTex EndNote

赵甘鸣, 鲍敏杭. 择优生长的多晶硅压阻统计理论[J]. Chin. J. Semicond., 1989, 10(9): 693...

非晶硅中的硅氢键与光致亚稳缺陷

秦国刚, 孔光临

Chin. J. Semicond. 1989, 10(9): 702-705

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(9): 702.

秦国刚, 孔光临. 非晶硅中的硅氢键与光致亚稳缺陷[J]. Chin. J. Semicond., 1989, 10(9): 702..Export: BibTex EndNote

秦国刚, 孔光临. 非晶硅中的硅氢键与光致亚稳缺陷[J]. Chin. J. Semicond., 1989, 10(9): 702...

氨气敏Pd-Ir合金栅MOS晶体管

张维新, 赵玲娟

Chin. J. Semicond. 1989, 10(9): 706-708

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(9): 706.

张维新, 赵玲娟. 氨气敏Pd-Ir合金栅MOS晶体管[J]. Chin. J. Semicond., 1989, 10(9): 706..Export: BibTex EndNote

张维新, 赵玲娟. 氨气敏Pd-Ir合金栅MOS晶体管[J]. Chin. J. Semicond., 1989, 10(9): 706...

等离子刻蚀铬膜的研究

杨民杰, 张骥华, 孙蓉, 卢平芳, 陈志强

Chin. J. Semicond. 1989, 10(9): 709-711

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(9): 709.

杨民杰, 张骥华, 孙蓉, 卢平芳, 陈志强. 等离子刻蚀铬膜的研究[J]. Chin. J. Semicond., 1989, 10(9): 709..Export: BibTex EndNote

杨民杰, 张骥华, 孙蓉, 卢平芳, 陈志强. 等离子刻蚀铬膜的研究[J]. Chin. J. Semicond., 1989, 10(9): 709...

1.55μm GaInAsP/InP DFB-DC-PBH激光器

赵嵩山, 马磐, 周宁, 杨新敏, 董志江

Chin. J. Semicond. 1989, 10(9): 712-716

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(9): 712.

赵嵩山, 马磐, 周宁, 杨新敏, 董志江. 1.55μm GaInAsP/InP DFB-DC-PBH激光器[J]. Chin. J. Semicond., 1989, 10(9): 712..Export: BibTex EndNote

赵嵩山, 马磐, 周宁, 杨新敏, 董志江. 1.55μm GaInAsP/InP DFB-DC-PBH激光器[J]. Chin. J. Semicond., 1989, 10(9): 712...

GaP:N,Zn中等电子陷阱与Zn受主之间的辐射复合

余琦, 张勇, 郑健生, 颜炳章

Chin. J. Semicond. 1989, 10(9): 717-721

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(9): 717.

余琦, 张勇, 郑健生, 颜炳章. GaP:N,Zn中等电子陷阱与Zn受主之间的辐射复合[J]. Chin. J. Semicond., 1989, 10(9): 717..Export: BibTex EndNote

余琦, 张勇, 郑健生, 颜炳章. GaP:N,Zn中等电子陷阱与Zn受主之间的辐射复合[J]. Chin. J. Semicond., 1989, 10(9): 717...

氢在金刚石表面的吸附

徐丹东, 叶令

Chin. J. Semicond. 1989, 10(9): 722-724

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(9): 722.

徐丹东, 叶令. 氢在金刚石表面的吸附[J]. Chin. J. Semicond., 1989, 10(9): 722..Export: BibTex EndNote

徐丹东, 叶令. 氢在金刚石表面的吸附[J]. Chin. J. Semicond., 1989, 10(9): 722...

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