Chin. J. Semicond. > 1989, Volume 10 > Issue 9 > 659-666
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Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火

吴春武 , 殷士端 , 张敬平 , 范缇文 , 刘家瑞 and 朱沛然

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(9): 659-666
      吴春武, 殷士端, 张敬平, 范缇文, 刘家瑞, 朱沛然. Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火[J]. 半导体学报(英文版), 1989, 10(9): 659-666.
      Citation:
      吴春武, 殷士端, 张敬平, 范缇文, 刘家瑞, 朱沛然. Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火[J]. 半导体学报(英文版), 1989, 10(9): 659-666.
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      • Received Date: 2015-08-19

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