Chin. J. Semicond. > 1989, Volume 10 > Issue 9 > 672-679
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中子辐照损伤区对硅少数载流子寿命的影响

施毅 , 吴凤美 , 沈德勋 , 程开甲 and 王长河

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(9): 672-679
      施毅, 吴凤美, 沈德勋, 程开甲, 王长河. 中子辐照损伤区对硅少数载流子寿命的影响[J]. 半导体学报(英文版), 1989, 10(9): 672-679.
      Citation:
      施毅, 吴凤美, 沈德勋, 程开甲, 王长河. 中子辐照损伤区对硅少数载流子寿命的影响[J]. 半导体学报(英文版), 1989, 10(9): 672-679.
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      • Received Date: 2015-08-19

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