Chin. J. Semicond. > 2005, Volume 26 > Issue 8 > 1489-1494
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Design and Fabrication of a High-Voltage nMOS Device

Li Hua , Song Limei , Du Huan and and Han Zhengsheng

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Key words: high-voltage nMOS devices, simulation, fabrication

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    Received: 18 August 2015 Revised: Online: Published: 01 August 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(8): 1489-1494
      Li Hua, Song Limei, Du Huan, and Han Zhengsheng. Design and Fabrication of a High-Voltage nMOS Device[J]. 半导体学报(英文版), 2005, 26(8): 1489-1494.
      Citation:
      Li Hua, Song Limei, Du Huan, and Han Zhengsheng. Design and Fabrication of a High-Voltage nMOS Device[J]. 半导体学报(英文版), 2005, 26(8): 1489-1494.
      shu

      • Received Date: 2015-08-18

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