Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy

Sun Hao; Qi Ming; Xu Anhuai; Ai Likun; Zhu Fuying

+ Author Affiliations

Article Navigation > Journal of Semiconductors > 2007 > 28(11): 1765-1768

Sun Hao, Qi Ming, Xu Anhuai, Ai Likun, Zhu Fuying. Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy[J]. Journal of Semiconductors, 2007, 28(11): 1765-1768. ****Sun H, Qi M, Xu A H, Ai L K, Zhu F Y. Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy[J]. Chin. J. Semicond., 2007, 28(11): 1765.

Citation:

Sun Hao, Qi Ming, Xu Anhuai, Ai Likun, Zhu Fuying. Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy[J]. Journal of Semiconductors, 2007, 28(11): 1765-1768. ****

Sun H, Qi M, Xu A H, Ai L K, Zhu F Y. Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy[J]. Chin. J. Semicond., 2007, 28(11): 1765.

Citation:

Sun Hao, Qi Ming, Xu Anhuai, Ai Likun, Zhu Fuying. Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy[J]. Journal of Semiconductors, 2007, 28(11): 1765-1768. ****

Sun H, Qi M, Xu A H, Ai L K, Zhu F Y. Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy[J]. Chin. J. Semicond., 2007, 28(11): 1765.

PDF( 741 KB)

Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy

State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
Graduate University of the Chinese Academy of Sciences,Beijing 100049,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

Received Date: 2015-08-18
Accepted Date: 2007-04-20
Revised Date: 2007-05-17
Published Date: 2007-10-24

Abstract

Abstract

Heavily carbon doped p-type GaAsSb epi-layers with lattice matched to InP substrate are grown by gas source molecular beam epitaxy (GSMBE) using carbon tetrabromide (CBr4) as the carbon source.The doping characteristics of carbon-doped GaAsSb with a hole concentration of (1～20)e19cm-3 are investigated.A maximal hole concentration of 2.025e20cm-3 is obtained with a corresponding mobility of 20.4cm2/(V·s).The effects of growth temperature on the epi-layer composition,crystalline quality,and surface roughness are also studied experimentally,and it is found that 480℃ is the optimal growth temperature at which high quality carbon-doped p-type GaAsSb epi-layers can be obtained.
- heterojunction bipolar transistor,
- InP,
- GaAsSb,
- carbon doping,
- gas source molecular beam epitaxy

FullText(HTML)

References(0)

References

Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy

Abstract

References

Proportional views

Catalog

Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content