Chin. J. Semicond. > 2002, Volume 23 > Issue 12 > 1275-1280
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基于第一性原理计算的C、Si、Ge的原子间相互作用势及晶格动力学

刘英 and 陈难先

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Key words: 陈氏三维晶格反演, 原子间相互作用势, 晶格动力学

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(12): 1275-1280
      刘英, 陈难先. 基于第一性原理计算的C、Si、Ge的原子间相互作用势及晶格动力学[J]. 半导体学报(英文版), 2002, 23(12): 1275-1280.
      Citation:
      刘英, 陈难先. 基于第一性原理计算的C、Si、Ge的原子间相互作用势及晶格动力学[J]. 半导体学报(英文版), 2002, 23(12): 1275-1280.
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      • Received Date: 2015-08-19

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