| Citation: |
Sun Ling, Yang Steve. Characterization of Gate Dielectric Using Oxides Generated by in situ Steam Generation[J]. Journal of Semiconductors, 2008, 29(3): 478-483.
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Sun L, Yang S. Characterization of Gate Dielectric Using Oxides Generated by in situ Steam Generation[J]. J. Semicond., 2008, 29(3): 478.
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Characterization of Gate Dielectric Using Oxides Generated by in situ Steam Generation
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Abstract
A new process for gate dielectric fabrication named in situ steam generation (ISSG) is reported.Based on the Deal-Grove model,an oxidation mechanism is proposed to break the Si-Si bond by an active atomic O and form a Si-O-Si bond during the oxidation process.The breakdown characteristics are investigated through a MOS-capacitor for both ISSG and furnace wet oxidation.The gate dielectric material generated by ISSG oxidation has a superior electrical performance owing to sufficient oxidation of weak Si-Si bonds relative to furnace wet oxidation,indicating a promising application in sub-micron IC device manufacturing.-
Keywords:
- ISSG,
- gate dielectric,
- breakdown
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References
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Proportional views
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