Chin. J. Semicond. > 2002, Volume 23 > Issue 11 > 1217-1223
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金属Ni诱导横向晶化的结构及工艺进程的优化(英文)

卓铭 and 徐秋霞

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Key words: 金属镍, 金属诱导横向晶化(MILC), 晶粒间界, 籽晶区, NiSi

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(11): 1217-1223
      卓铭, 徐秋霞. 金属Ni诱导横向晶化的结构及工艺进程的优化(英文)[J]. 半导体学报(英文版), 2002, 23(11): 1217-1223.
      Citation:
      卓铭, 徐秋霞. 金属Ni诱导横向晶化的结构及工艺进程的优化(英文)[J]. 半导体学报(英文版), 2002, 23(11): 1217-1223.
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      • Received Date: 2015-08-19

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