Chin. J. Semicond. > 2004, Volume 25 > Issue 10 > 1296-1300
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考虑源漏串联电阻时6H-SiC PMOSFET解析模型

郜锦侠 , 张义门 and 张玉明

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Key words: 6H-SiC, PMOSFET, 源漏串联电阻, 解析模型

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(10): 1296-1300
      郜锦侠, 张义门, 张玉明. 考虑源漏串联电阻时6H-SiC PMOSFET解析模型[J]. 半导体学报(英文版), 2004, 25(10): 1296-1300.
      Citation:
      郜锦侠, 张义门, 张玉明. 考虑源漏串联电阻时6H-SiC PMOSFET解析模型[J]. 半导体学报(英文版), 2004, 25(10): 1296-1300.
      shu

      • Received Date: 2015-08-19

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