Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 502-507

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Abstract: 利用常压MOCVD法在蓝宝石(0001)衬底上沉积了非故意掺杂ZnO单晶薄膜.用Van der Pauw法测量了其从15K到室温的载流子浓度和霍耳迁移率,并用双层结构单施主模型对载流子浓度和迁移率进行了拟合分析.研究表明:ZnO薄膜浅施主能级为20.4meV,温度较低时,以电离杂质散射为主,温度较高时,以极性光学波散射为主.

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

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      周鹏, 王立, 方文卿, 蒲勇, 戴江南, 江风益. 常压MOCVD生长的ZnO薄膜的电学性能[J]. Journal of Semiconductors, 2005, 26(3): 502-507. ****常压MOCVD生长的ZnO薄膜的电学性能[J]. Chin. J. Semicond., 2005, 26(3): 502.
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      周鹏, 王立, 方文卿, 蒲勇, 戴江南, 江风益. 常压MOCVD生长的ZnO薄膜的电学性能[J]. Journal of Semiconductors, 2005, 26(3): 502-507. ****
      常压MOCVD生长的ZnO薄膜的电学性能[J]. Chin. J. Semicond., 2005, 26(3): 502.

      常压MOCVD生长的ZnO薄膜的电学性能

      • Received Date: 2015-08-19

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