Chin. J. Semicond. > 1984, Volume 5 > Issue 3 > 247-256
|

CONTENTS

SiCl_4外延生长硅晶体中碳沾污的热力学分析

徐宝琨 and 赵慕愚

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2562 Times PDF downloads: 788 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 March 1984

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1984  >  5(3): 247-256
      徐宝琨, 赵慕愚. SiCl_4外延生长硅晶体中碳沾污的热力学分析[J]. 半导体学报(英文版), 1984, 5(3): 247-256.
      Citation:
      徐宝琨, 赵慕愚. SiCl_4外延生长硅晶体中碳沾污的热力学分析[J]. 半导体学报(英文版), 1984, 5(3): 247-256.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return