Chin. J. Semicond. > 2004, Volume 25 > Issue 10 > 1306-1310
|

CONTENTS

超薄SiO_2栅介质厚度提取与分析

谭静荣 , 许晓燕 , 黄如 , 程行之 and 张兴

+ Author Affiliations

PDF

Key words: 超薄栅介质, 量子效应, 多晶硅耗尽效应, 栅氧厚度

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2401 Times PDF downloads: 1044 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 October 2004

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2004  >  25(10): 1306-1310
      谭静荣, 许晓燕, 黄如, 程行之, 张兴. 超薄SiO_2栅介质厚度提取与分析[J]. 半导体学报(英文版), 2004, 25(10): 1306-1310.
      Citation:
      谭静荣, 许晓燕, 黄如, 程行之, 张兴. 超薄SiO_2栅介质厚度提取与分析[J]. 半导体学报(英文版), 2004, 25(10): 1306-1310.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return