Chin. J. Semicond. > 2001, Volume 22 > Issue 8 > 962-966
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高压 Ti/ 6H- SiC肖特基势垒二极管(英文)

王姝睿 , 刘忠立 , 李国花 , 于芳 and 刘焕章

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Key words: 碳化硅, 肖特基势垒二极管, 6H-Si

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(8): 962-966
      王姝睿, 刘忠立, 李国花, 于芳, 刘焕章. 高压 Ti/ 6H- SiC肖特基势垒二极管(英文)[J]. 半导体学报(英文版), 2001, 22(8): 962-966.
      Citation:
      王姝睿, 刘忠立, 李国花, 于芳, 刘焕章. 高压 Ti/ 6H- SiC肖特基势垒二极管(英文)[J]. 半导体学报(英文版), 2001, 22(8): 962-966.
      shu

      • Received Date: 2015-08-20

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