Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 74-77

Surface and Interface Characteristic of Sputtered Nanometer PtSi Film

Yin Jinghua, Cai Wei, Wang Mingguang, Zheng Yufeng, Li Meicheng, Wang Peilin and Zhao Liancheng

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Abstract: The 5nm Pt films are deposited on p-Si (111) substrate by magnetron sputtering. After annealing, Pt films turn into PtSi. The characteristic of surface and interface of Ptsi films are studied by AFM and -RTEM. The results show that the technology conditions influence the interface structure and surface morphology of Ptsi films. With an increase of substrate temperature, the columnar clusters on the surface become into the flat ones, and multi-layer films to be the single ones. If the substrate are heated, there are only PtSi phase in the single layer film that is uniform and sound and has a smooth, clear and coherent interface.

Key words: PtSi film surface morphology interface structure

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Yin Jinghua, Cai Wei, Wang Mingguang, Zheng Yufeng, Li Meicheng, Wang Peilin, Zhao Liancheng. Surface and Interface Characteristic of Sputtered Nanometer PtSi Film[J]. Journal of Semiconductors, 2003, 24(S1): 74-77. ****Yin J H, Cai W, Wang M G, Zheng Y F, Li M C, Wang P L, Zhao L C. Surface and Interface Characteristic of Sputtered Nanometer PtSi Film[J]. Chin. J. Semicond., 2003, 24(S1): 74.
      Citation:
      Yin Jinghua, Cai Wei, Wang Mingguang, Zheng Yufeng, Li Meicheng, Wang Peilin, Zhao Liancheng. Surface and Interface Characteristic of Sputtered Nanometer PtSi Film[J]. Journal of Semiconductors, 2003, 24(S1): 74-77. ****
      Yin J H, Cai W, Wang M G, Zheng Y F, Li M C, Wang P L, Zhao L C. Surface and Interface Characteristic of Sputtered Nanometer PtSi Film[J]. Chin. J. Semicond., 2003, 24(S1): 74.

      Surface and Interface Characteristic of Sputtered Nanometer PtSi Film

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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