Chin. J. Semicond. > 2002, Volume 23 > Issue 7 > 746-751
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开管扩镓改善器件电参数性能的机理分析

孙瑛

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Key words: 开管镓掺杂, SiO2/Si系, 机理

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    Received: 19 August 2015 Revised: Online: Published: 01 July 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(7): 746-751
      孙瑛. 开管扩镓改善器件电参数性能的机理分析[J]. 半导体学报(英文版), 2002, 23(7): 746-751.
      Citation:
      孙瑛. 开管扩镓改善器件电参数性能的机理分析[J]. 半导体学报(英文版), 2002, 23(7): 746-751.
      shu

      • Received Date: 2015-08-19

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