Chin. J. Semicond. > 2005, Volume 26 > Issue 7 > 1396-1400
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阶梯埋氧型SOI结构的耐压分析

段宝兴 , 张波 and 李肇基

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Key words: SOI RESURF结构, 阶梯埋氧型SOI, 电场调制, 比导通电阻

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    Received: 18 August 2015 Revised: Online: Published: 01 July 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(7): 1396-1400
      段宝兴, 张波, 李肇基. 阶梯埋氧型SOI结构的耐压分析[J]. 半导体学报(英文版), 2005, 26(7): 1396-1400.
      Citation:
      段宝兴, 张波, 李肇基. 阶梯埋氧型SOI结构的耐压分析[J]. 半导体学报(英文版), 2005, 26(7): 1396-1400.
      shu

      • Received Date: 2015-08-18

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