| Citation: |
Lin Guijiang, Lai Hongkai, Li Cheng, Chen Songyan, Yu Jinzhong. Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser[J]. Journal of Semiconductors, 2006, 27(5): 916-920.
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Lin G J, Lai H K, Li C, Chen S Y, Yu J Z. Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser[J]. Chin. J. Semicond., 2006, 27(5): 916.
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Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser
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Abstract
The eigenenergies of confined states in Si/SiGe/Si quantum wells are calculated with nextnano3 software for the design of terahertz Si/SiGe QCLs.The results indicate that the structure of the Si/SiGe quantum cascade may be optimized by using a strain-symmetric heterostructure consisting of a Si1-xGex(0.27＜x＜0.3) well with a width of 3nm and a Si barrier with a width of 3nm. -
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