Chin. J. Semicond. > 1993, Volume 14 > Issue 3 > 181-184
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MOCVD生长CdTe薄层的缺陷研究

彭承 , 陆叶华 , 孙恒慧 , 唐文国 and 李自元

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(3): 181-184
      彭承, 陆叶华, 孙恒慧, 唐文国, 李自元. MOCVD生长CdTe薄层的缺陷研究[J]. 半导体学报(英文版), 1993, 14(3): 181-184.
      Citation:
      彭承, 陆叶华, 孙恒慧, 唐文国, 李自元. MOCVD生长CdTe薄层的缺陷研究[J]. 半导体学报(英文版), 1993, 14(3): 181-184.
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      • Received Date: 2015-08-20

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