HgCdTe钝化过程中形成的镶嵌结构及其热处理效应

孙涛; 王庆学; 陈文桥; 梁晋穗; 陈兴国; 胡晓宁; 李言谨

Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 62-66

CONTENTS

HgCdTe钝化过程中形成的镶嵌结构及其热处理效应

+ Author Affiliations

Abstract: 通过高分辨X射线衍射仪中的二维点阵研究了溅射的CdTe介质膜对HgCdTe外延层的影响．发现在高溅射能量下沉积的钝化膜由于应力的作用，HgCdTe晶片出现弯曲及大量镶嵌结构，而这种镶嵌结构可通过合理的热处理工艺消除．

1	Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering Wang Guanghua, Kong Jincheng, Li Xiongjun, Qiu Feng, Li Cong, et al. Journal of Semiconductors, 2010, 31(5): 053004. doi: 10.1088/1674-4926/31/5/053004
2	Crosstalk of HgCdTe LWIR n-on-p diode arrays Sun Yinghui, Zhang Bo, Yu Meifang, Liao Qingjun, Zhang Yan, et al. Journal of Semiconductors, 2009, 30(9): 094007. doi: 10.1088/1674-4926/30/9/094007
3	Surface Passivation of Variable-Area HgCdTe Photovoltaic Detectors Qiao Hui, Xu Guoqing, Jia Jia, Li Xiangyang Journal of Semiconductors, 2008, 29(7): 1383-1386.
4	Evaluation of the Composition Profile of HgCdTe LPE Films by IR Transmission Spectrum Gu Renjie, Zhang Chuanjie, Yang Jianrong, Chen Xinqiang, Wei Yanfeng, et al. Journal of Semiconductors, 2008, 29(3): 534-538.
5	Propagation Induced Pulse Broadening of Single Event Transient Liang Bin, Chen Shuming, Liu Biwei, Liu Zheng Journal of Semiconductors, 2008, 29(9): 1827-1831.
6	Growth and Characterization of HgCdTe Compositional Heterojunctions Jiao Cuiling, Xu Qingqing, Zhao Shouren, Sun Shiwen, Fang Weizheng, et al. Journal of Semiconductors, 2008, 29(7): 1342-1346.
7	Effect of Annealing Temperature on Amorphous Semiconductor As2S8 Film Waveguide Zou Liner, Chen Baoxue, Du Liping, Liu Xiaoqing, Hamanaka H, et al. Chinese Journal of Semiconductors , 2007, 28(8): 1307-1311.
8	Influence of Background Radiation on a Medium-Wave HgCdTe Photoconductive Detector with Overlap Structure Zhang Yan, Fang Jiaxiong, Xu Guosen Chinese Journal of Semiconductors , 2007, 28(6): 958-962.
9	LPE Growth and Characterization of HgCdTe on Si Based Substrate Xu Qingqing, Chen Xinqiang, Wei Yanfeng, Yang Jianrong, Chen Lu, et al. Chinese Journal of Semiconductors , 2007, 28(7): 1078-1082.
10	Photoluminescence Study on Resonant Energy Transfer ProcessBetween Two Sizes of CdTe QDs Embedded in Gelatin Films Xu Ling, Ma Zhongyuan, Xu Jun, Huang Xinfan, Chen Kunji, et al. Chinese Journal of Semiconductors , 2006, 27(S1): 68-71.
11	MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs He Li, Chen Lu, Wu Jun, Wu Yan, Wang Yuanzhang, et al. Chinese Journal of Semiconductors , 2006, 27(3): 381-387.
12	Eteh Pits Formed by Schaake and Chen Etchants in HgCdTe Epilayer Cao Xiuliang, Yang Jianrong Chinese Journal of Semiconductors , 2006, 27(8): 1401-1405.
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15	液相外延HgCdTe薄膜组分均匀性的研究马庆华, 陈建才, 吴军, 孔金丞, 杨宇, et al. Chinese Journal of Semiconductors , 2005, 26(3): 513-516.
16	不同钝化结构的HgCdTe光伏探测器暗电流机制孙涛, 陈文桥, 梁晋穗, 陈兴国, 胡晓宁, et al. Chinese Journal of Semiconductors , 2005, 26(1): 143-147.
17	退火过程中自组织生长 Chinese Journal of Semiconductors , 2002, 23(6): 561-564.
18	板上芯片固化及热处理过程中表面残余应力的演变 Chinese Journal of Semiconductors , 2002, 23(8): 874-880.
19	CoSi_2薄膜形成过程中的反应机制 Chinese Journal of Semiconductors , 1994, 15(8): 544-550.
20	MBE AI/GaAs界面反应和真空热处理效应 Chinese Journal of Semiconductors , 1986, 7(2): 196-201.