| Citation: |
Wang Xinhua, Wang Xiaoliang, Feng Chun, Ran Junxue, Xiao Hongling, Yang Cuibai, Wang Baozhu, Wang Junxi. Hydrogen Sensors Based on AlGaN/GaN Back-to-Back Schottky Diodes[J]. Journal of Semiconductors, 2008, 29(1): 153-156.
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Wang X H, Wang X L, Feng C, Ran J X, Xiao H L, Yang C B, Wang B Z, Wang J X. Hydrogen Sensors Based on AlGaN/GaN Back-to-Back Schottky Diodes[J]. J. Semicond., 2008, 29(1): 153.
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Hydrogen Sensors Based on AlGaN/GaN Back-to-Back Schottky Diodes
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Abstract
Hydrogen sensors based on AlGaN/GaN back-to-back Schottky diodes have been produced.Platinum is sputtered on the surface of the sample.The response of the device to 10% H2 in N2 is measured at 25~100℃.The oxygen in the air has great influence on the current of the device.Finally,the variation of the Schottky barrier height induced by the hydrogen is calculated.-
Keywords:
- GaN,
- gas sensor,
- Schottky diode
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References
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Proportional views
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