Chin. J. Semicond. > 2004, Volume 25 > Issue 10 > 1205-1210
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可用于Ⅲ族氮化物生长的50mm 3C-SiC/Si(111)衬底的制备(英文)

孙国胜 , 张永兴 , 高欣 , 王军喜 , 王雷 , 赵万顺 , 王晓亮 , 曾一平 and 李晋闽

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Key words: 3C-SiC/Si(111)衬底, LPCVD, GaN

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(10): 1205-1210
      孙国胜, 张永兴, 高欣, 王军喜, 王雷, 赵万顺, 王晓亮, 曾一平, 李晋闽. 可用于Ⅲ族氮化物生长的50mm 3C-SiC/Si(111)衬底的制备(英文)[J]. 半导体学报(英文版), 2004, 25(10): 1205-1210.
      Citation:
      孙国胜, 张永兴, 高欣, 王军喜, 王雷, 赵万顺, 王晓亮, 曾一平, 李晋闽. 可用于Ⅲ族氮化物生长的50mm 3C-SiC/Si(111)衬底的制备(英文)[J]. 半导体学报(英文版), 2004, 25(10): 1205-1210.
      shu

      • Received Date: 2015-08-19

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