Chin. J. Semicond. > 1984, Volume 5 > Issue 6 > 605-610
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亚微米厚自支撑单晶Si薄膜的沟道-背散射研究

彭秀峰 , 龙先灌 , 王明华 , 何福庆 and 郭华聪

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(6): 605-610
      彭秀峰, 龙先灌, 王明华, 何福庆, 郭华聪. 亚微米厚自支撑单晶Si薄膜的沟道-背散射研究[J]. 半导体学报(英文版), 1984, 5(6): 605-610.
      Citation:
      彭秀峰, 龙先灌, 王明华, 何福庆, 郭华聪. 亚微米厚自支撑单晶Si薄膜的沟道-背散射研究[J]. 半导体学报(英文版), 1984, 5(6): 605-610.
      shu

      • Received Date: 2015-08-20

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