Chin. J. Semicond. > 2001, Volume 22 > Issue 10 > 1298-1305
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深亚微米槽栅PMOSFET结构参数对其抗热载流子效应和短沟道抑制作用的影响

任红霞 and 郝跃

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Key words: 深亚微米, 槽栅PMOSFET, 热载流子效应, 短沟道效应, 结构参数

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(10): 1298-1305
      任红霞, 郝跃. 深亚微米槽栅PMOSFET结构参数对其抗热载流子效应和短沟道抑制作用的影响[J]. 半导体学报(英文版), 2001, 22(10): 1298-1305.
      Citation:
      任红霞, 郝跃. 深亚微米槽栅PMOSFET结构参数对其抗热载流子效应和短沟道抑制作用的影响[J]. 半导体学报(英文版), 2001, 22(10): 1298-1305.
      shu

      • Received Date: 2015-08-20

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