Chin. J. Semicond. > 1997, Volume 18 > Issue 11 > 825-831
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电迁徙参数—电流密度因子电流斜坡测试法

李志国 , 孙英华 , 邓燕 , 张炜 , 程尧海 , 郭伟玲 and 张万荣

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(11): 825-831
      李志国, 孙英华, 邓燕, 张炜, 程尧海, 郭伟玲, 张万荣. 电迁徙参数—电流密度因子电流斜坡测试法[J]. 半导体学报(英文版), 1997, 18(11): 825-831.
      Citation:
      李志国, 孙英华, 邓燕, 张炜, 程尧海, 郭伟玲, 张万荣. 电迁徙参数—电流密度因子电流斜坡测试法[J]. 半导体学报(英文版), 1997, 18(11): 825-831.
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      • Received Date: 2015-08-19

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