Chin. J. Semicond. > 1994, Volume 15 > Issue 1 > 67-70
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用离子集团束技术在Si上外延生长GaAs

余怀之，吕玉林，刘建平，冯德伸

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    Received: 18 August 2015 Revised: Online: Published: 01 January 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(1): 67-70
      余怀之，吕玉林，刘建平，冯德伸. 用离子集团束技术在Si上外延生长GaAs[J]. 半导体学报(英文版), 1994, 15(1): 67-70.
      Citation:
      余怀之，吕玉林，刘建平，冯德伸. 用离子集团束技术在Si上外延生长GaAs[J]. 半导体学报(英文版), 1994, 15(1): 67-70.
      shu

      • Received Date: 2015-08-18

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