Chin. J. Semicond. > 2003, Volume 24 > Issue 9 > 946-950
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应变Si_(1-x)Ge_x材料掺杂浓度的表征技术

戴显英 , 张鹤鸣 , 王伟 , 胡辉勇 , 吕懿 and 舒斌

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Key words: Si_(1-x)Ge_x材料, 四探针, 电阻率, 掺杂浓度, 迁移率模型, 表征

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(9): 946-950
      戴显英, 张鹤鸣, 王伟, 胡辉勇, 吕懿, 舒斌. 应变Si_(1-x)Ge_x材料掺杂浓度的表征技术[J]. 半导体学报(英文版), 2003, 24(9): 946-950.
      Citation:
      戴显英, 张鹤鸣, 王伟, 胡辉勇, 吕懿, 舒斌. 应变Si_(1-x)Ge_x材料掺杂浓度的表征技术[J]. 半导体学报(英文版), 2003, 24(9): 946-950.
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      • Received Date: 2015-08-20

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