Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods

Zhao Yi; Wan Xinggong; Xu Xiangming; Cao Gang; Bu Jiao

Chin. J. Semicond. > 2006, Volume 27 > Issue 2 > 290-293

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Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods

Zhao Yi, Wan Xinggong, Xu Xiangming, Cao Gang and Bu Jiao

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Abstract: Breakdown voltage (V_bd) and charge to breakdown (Q_bd) are two parameters often used to evaluate gate oxide reliability.In this paper,we investigate the effects of measurement methods on V_bd and Q_bd of the gate oxide of a 0.18μm dual gate CMOS process.Voltage ramps (V-ramp) and current ramps (J-ramp) are used to evaluate gate oxide reliability.The thin and thick gate oxides are all evaluated in the accumulation condition.Our experimental results show that the measurement methods affect V_bd only slightly but affect Q_bd seriously,as do the measurement conditions.This affects the I-t curves obtained with the J-ramp and V-ramp methods.From the I-t curve,it can be seen that Q_bd obtained using a J-ramp is much bigger than that with a V-ramp.At the same time,the Weibull slopes of Q_bd are definitely smaller than those of V_bd.This means that V_bd is more reliable than Q_bd.Thus we should be careful to use Q_bd to evaluate the reliability of 0.18μm or beyond CMOS process gate oxide.

Key words: gate oxide reliability, voltage to breakdown, charge to breakdown, voltage ramp, current ramp

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Zhao Yi, Wan Xinggong, Xu Xiangming, Cao Gang, Bu Jiao. Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods[J]. Journal of Semiconductors, 2006, 27(2): 290-293.

Zhao Y, Wan X G, Xu X M, Cao G, Bu J. Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods[J]. Chin. J. Semicond., 2006, 27(2): 290.

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Received: 20 August 2015 Revised: Online: Published: 01 February 2006

Breakdown voltage (V_bd) and charge to breakdown (Q_bd) are two parameters often used to evaluate gate oxide reliability.In this paper,we investigate the effects of measurement methods on V_bd and Q_bd of the gate oxide of a 0.18μm dual gate CMOS process.Voltage ramps (V-ramp) and current ramps (J-ramp) are used to evaluate gate oxide reliability.The thin and thick gate oxides are all evaluated in the accumulation condition.Our experimental results show that the measurement methods affect V_bd only slightly but affect Q_bd seriously,as do the measurement conditions.This affects the I-t curves obtained with the J-ramp and V-ramp methods.From the I-t curve,it can be seen that Q_bd obtained using a J-ramp is much bigger than that with a V-ramp.At the same time,the Weibull slopes of Q_bd are definitely smaller than those of V_bd.This means that V_bd is more reliable than Q_bd.Thus we should be careful to use Q_bd to evaluate the reliability of 0.18μm or beyond CMOS process gate oxide.

Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods

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