Citation: |
Dong Qiaohua, Liao Xiaoping, Huang Qing’an, Huang Jianqiu. Analysis of Pull-In Voltage of RF MEMS Switches[J]. Journal of Semiconductors, 2008, 29(1): 163-167.
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Dong Q H, Liao X P, Huang Q, Huang J Q. Analysis of Pull-In Voltage of RF MEMS Switches[J]. J. Semicond., 2008, 29(1): 163.
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Analysis of Pull-In Voltage of RF MEMS Switches
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Abstract
The pull-in voltage of RF MEMS switches at different actuations is presented.When the actuation voltage is a pulse voltage,the movement of the switch beam is in a vibration state rather than quasi-static,so the pull-in voltage is different from the quasi-static condition and is called dynamic pull-in voltage.It is about 92% of the quasi-static pull-in voltage.Following the simple formula of the spring coefficient of a beam and the exact formula of the capacitor for the switch,the quasi-static and dynamic pull-in voltages of the clamped-clamped beam switch on CPW are analyzed,and the damping effect is also included.The damping reduces the difference between the two kinds of pull-in voltages.Finally,the influence of the RF input power on the pull-in voltage is analyzed.The input power decreases the pull-in voltage,reducing the pull-in voltage to zero at a certain power,and then making the switch self-actuate.-
Keywords:
- RF MEMS,
- switch,
- pull-in voltage,
- quasi-static,
- dynamic,
- damping
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References
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Proportional views