Chin. J. Semicond. > 2002, Volume 23 > Issue 10 > 1062-1066
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Pb_(1-x)Ge_xTe薄膜在铁电相变点的折射率异常

李斌 , 江锦春 , 张素英 and 张凤山

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Key words: Pb1-xGexTe, 折射率, 铁电相变, Moss定则

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(10): 1062-1066
      李斌, 江锦春, 张素英, 张凤山. Pb_(1-x)Ge_xTe薄膜在铁电相变点的折射率异常[J]. 半导体学报(英文版), 2002, 23(10): 1062-1066.
      Citation:
      李斌, 江锦春, 张素英, 张凤山. Pb_(1-x)Ge_xTe薄膜在铁电相变点的折射率异常[J]. 半导体学报(英文版), 2002, 23(10): 1062-1066.
      shu

      • Received Date: 2015-08-19

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