Chin. J. Semicond. > 1991, Volume 12 > Issue 5 > 273-283
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电场调制效应对氧化层电流弛豫谱的影响

许铭真 , 谭长华 , 刘晓卫 and 王阳元

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(5): 273-283
      许铭真, 谭长华, 刘晓卫, 王阳元. 电场调制效应对氧化层电流弛豫谱的影响[J]. 半导体学报(英文版), 1991, 12(5): 273-283.
      Citation:
      许铭真, 谭长华, 刘晓卫, 王阳元. 电场调制效应对氧化层电流弛豫谱的影响[J]. 半导体学报(英文版), 1991, 12(5): 273-283.
      shu

      • Received Date: 2015-08-19

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