| Citation: |
Xu Jiangtao, Yao Suying, Li Binqiao, Shi Zaifeng, Gao Jing. Design,Analysis,and Optimization of a CMOS Active Pixel Sensor[J]. Journal of Semiconductors, 2006, 27(9): 1548-1551.
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Xu J T, Yao S Y, Li B Q, Shi Z F, Gao J. Design,Analysis,and Optimization of a CMOS Active Pixel Sensor[J]. Chin. J. Semicond., 2006, 27(9): 1548.
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Design,Analysis,and Optimization of a CMOS Active Pixel Sensor
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Abstract
A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed.The circuit is embedded in a 64×64 pixel array CMOS image sensor and successfully taped out with a Chartered 0.35μm process.The pixel pitch is 8μm×8μm with a fill factor of 57%,the photo-sensitivity is 0.8V/(lux·s),and the dynamic range is 50dB.Theoretical analysis and test results indicate that as the process is scaled down,a smaller pixel pitch reduces the sensitivity.A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes. -
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