Chin. J. Semicond. > 2002, Volume 23 > Issue 11 > 1168-1172
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不同Mg掺杂浓度的GaN材料的光致发光

周晓滢 , 郭文平 , 胡卉 , 孙长征 and 罗毅

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Key words: p型掺杂, GaN, 光致发光, 退火, 补偿, 势能波动

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(11): 1168-1172
      周晓滢, 郭文平, 胡卉, 孙长征, 罗毅. 不同Mg掺杂浓度的GaN材料的光致发光[J]. 半导体学报(英文版), 2002, 23(11): 1168-1172.
      Citation:
      周晓滢, 郭文平, 胡卉, 孙长征, 罗毅. 不同Mg掺杂浓度的GaN材料的光致发光[J]. 半导体学报(英文版), 2002, 23(11): 1168-1172.
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      • Received Date: 2015-08-19

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