Chin. J. Semicond. > 2001, Volume 22 > Issue 5 > 641-645
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Au/PZT/p-Si结构铁电存储二极管的制备及其性能

王华 , 于军 , 董晓敏 , 周文利 , 王耘波 and 谢基凡

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Key words: 脉冲激光沉积(PLD), 铁电薄膜, 铁电存储二极管, 锆钛酸铅(PZT)

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(5): 641-645
      王华, 于军, 董晓敏, 周文利, 王耘波, 谢基凡. Au/PZT/p-Si结构铁电存储二极管的制备及其性能[J]. 半导体学报(英文版), 2001, 22(5): 641-645.
      Citation:
      王华, 于军, 董晓敏, 周文利, 王耘波, 谢基凡. Au/PZT/p-Si结构铁电存储二极管的制备及其性能[J]. 半导体学报(英文版), 2001, 22(5): 641-645.
      shu

      • Received Date: 2015-08-20

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