Chin. J. Semicond. > 2004, Volume 25 > Issue 7 > 831-835
|

CONTENTS

发射极镇流电阻对In_(0.49)Ga_(0 .51)P/GaAs HBT特性的影响

石瑞英 , 孙海锋 , 袁志鹏 , 罗明雄 and 汪宁

+ Author Affiliations

PDF

Key words: 发射极镇流电阻, In0.49Ga0.51P/GaAsHBT, 直流特性, 高频特性

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2968 Times PDF downloads: 1037 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 July 2004

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2004  >  25(7): 831-835
      石瑞英, 孙海锋, 袁志鹏, 罗明雄, 汪宁. 发射极镇流电阻对In_(0.49)Ga_(0 .51)P/GaAs HBT特性的影响[J]. 半导体学报(英文版), 2004, 25(7): 831-835.
      Citation:
      石瑞英, 孙海锋, 袁志鹏, 罗明雄, 汪宁. 发射极镇流电阻对In_(0.49)Ga_(0 .51)P/GaAs HBT特性的影响[J]. 半导体学报(英文版), 2004, 25(7): 831-835.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return