Chin. J. Semicond. > 2003, Volume 24 > Issue 1 > 54-57
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热氧化法钝化硅片的少数载流子寿命

崔灿 , 杨德仁 , 余学功 , 马向阳 , 李立本 and 阙端麟

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Key words: 直拉硅, 少子寿命, 钝化, 氧沉淀

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(1): 54-57
      崔灿, 杨德仁, 余学功, 马向阳, 李立本, 阙端麟. 热氧化法钝化硅片的少数载流子寿命[J]. 半导体学报(英文版), 2003, 24(1): 54-57.
      Citation:
      崔灿, 杨德仁, 余学功, 马向阳, 李立本, 阙端麟. 热氧化法钝化硅片的少数载流子寿命[J]. 半导体学报(英文版), 2003, 24(1): 54-57.
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      • Received Date: 2015-08-20

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