Chin. J. Semicond. > 2003, Volume 24 > Issue 9 > 907-910
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高跨导AlGaN/GaN HEMT器件(英文)

肖冬萍 , 刘键 , 魏珂 , 和致经 , 刘新宇 and 吴德馨

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Key words: AlGaN/GaN, HEMTs, 跨导

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(9): 907-910
      肖冬萍, 刘键, 魏珂, 和致经, 刘新宇, 吴德馨. 高跨导AlGaN/GaN HEMT器件(英文)[J]. 半导体学报(英文版), 2003, 24(9): 907-910.
      Citation:
      肖冬萍, 刘键, 魏珂, 和致经, 刘新宇, 吴德馨. 高跨导AlGaN/GaN HEMT器件(英文)[J]. 半导体学报(英文版), 2003, 24(9): 907-910.
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      • Received Date: 2015-08-20

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