Chin. J. Semicond. > 2004, Volume 25 > Issue 10 > 1227-1232
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超薄体MOSFET的结构优化(英文)

王文平 , 黄如 and 张国艳

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Key words: 超薄体MOSFET, 提升源漏高度, Ge摩尔百分比, 硅膜厚度

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(10): 1227-1232
      王文平, 黄如, 张国艳. 超薄体MOSFET的结构优化(英文)[J]. 半导体学报(英文版), 2004, 25(10): 1227-1232.
      Citation:
      王文平, 黄如, 张国艳. 超薄体MOSFET的结构优化(英文)[J]. 半导体学报(英文版), 2004, 25(10): 1227-1232.
      shu

      • Received Date: 2015-08-19

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