Chin. J. Semicond. > 1998, Volume 19 > Issue 9 > 678-682
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透射式GaAS阴极粘结工艺的X射线双晶衍射研究

闫金良 and 向世明

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    Received: 18 August 2015 Revised: Online: Published: 01 September 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(9): 678-682
      闫金良, 向世明. 透射式GaAS阴极粘结工艺的X射线双晶衍射研究[J]. 半导体学报(英文版), 1998, 19(9): 678-682.
      Citation:
      闫金良, 向世明. 透射式GaAS阴极粘结工艺的X射线双晶衍射研究[J]. 半导体学报(英文版), 1998, 19(9): 678-682.
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      • Received Date: 2015-08-18

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