| Citation: |
Tan Kaizhou, Yang Mohua, Xu Shiliu, Liu Yukui, Li Zhaoji, Liu Yong, Feng Jian. A Novel BCD Structure with Semi-Insulation Bonding SOI[J]. Journal of Semiconductors, 2007, 28(5): 763-767.
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Tan K Z, Yang M H, Xu S L, Liu Y K, Li Z J, Liu Y, Feng J. A Novel BCD Structure with Semi-Insulation Bonding SOI[J]. Chin. J. Semicond., 2007, 28(5): 763.
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A Novel BCD Structure with Semi-Insulation Bonding SOI
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Abstract
A novel BCD structure with semi-insulation bonding SOI is proposed.It reliably integrates a high voltage power device,CMOS,and BJT into a monolithic circuit.Integrated VDMOS lengthways is a unique feature of this structure.It is a useful technique in applications of automotive electronics,radiation hardening,and strong electromagnetic pulses (EMP).The breakdown voltage of this BCD structure VDMOS is 160V,its on-resistance is 0.3Ω,and its specific on-resistance is 26mΩ·cm2.The breakdown voltages of npn,pMOS,and nMOS are 50,35,and 30V,respectively,and the npn current gain and cut-off frequency are 120 and 700MHz,respectively.-
Keywords:
- BCD,
- semi-insulation SOI,
- VDMOS,
- power integrated circuit
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References
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Proportional views
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