Chin. J. Semicond. > 2003, Volume 24 > Issue 1 > 29-33
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CONTENTS

镶嵌在超薄SiO_2层中的纳米硅的库仑阻塞现象

石建军 , 吴良才 , 鲍云 , 刘嘉瑜 , 马忠元 , 戴敏 , 黄信凡 , 李伟 , 徐骏 and 陈坤基

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Key words: 纳米硅, C-V, 超薄氧化层, 隧穿

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(1): 29-33
      石建军, 吴良才, 鲍云, 刘嘉瑜, 马忠元, 戴敏, 黄信凡, 李伟, 徐骏, 陈坤基. 镶嵌在超薄SiO_2层中的纳米硅的库仑阻塞现象[J]. 半导体学报(英文版), 2003, 24(1): 29-33.
      Citation:
      石建军, 吴良才, 鲍云, 刘嘉瑜, 马忠元, 戴敏, 黄信凡, 李伟, 徐骏, 陈坤基. 镶嵌在超薄SiO_2层中的纳米硅的库仑阻塞现象[J]. 半导体学报(英文版), 2003, 24(1): 29-33.
      shu

      • Received Date: 2015-08-20

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